leshan radio company, ltd. l7 4 vhc1g08 v2 d 1 3 2 4 5 tsop?5/sot?23/sc?59 dt suffix the l 74vhc1g08 is an advanced high speed cmos 2?input and gate fabricated with silicon gate cmos technology. it achiev es high speed operation similar to equivalent bipolar schottky ttl while maintaining cmos low power issipation. the internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stab le output. the l 74vhc1g08 input structure provides protection when voltages up to 7 v are applied, regardless of the supply volta ge. this allows the l 74vhc1g08 to be used to interface 5 v circuits to 3 v circuits. high speed: t pd = 3.5 ns (typ) at v cc = 5 v low power dissipation: i cc = 2 ma (max) at t a = 25c power down protection provided on inputs balanced propagation delays pin and function compatible with other standard logic families chip complexity: fets = 62; equivalent gates = 15 sc?88a / sot?353/sc?70 df suffix 1 3 2 4 5 marking diagrams pin 1 d = date code figure 1. pinout (top view) figure 2. logic symbol pin assignment 1 in b 2 in a 3 gnd 4 out y 5v cc function table inputs ou tput ab y ll l lh l hl l hh h ordering information see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 2-input and gate v2 d pin 1 d = date code 1/6
leshan radio company, ltd. l 74vhc1g08 recommended operating conditions symbol parameter min max unit v cc dc supply voltage 2.0 5.5 v v in dc input voltage 0.0 5.5 v v out dc output voltage 0.0 7.0 v t a operating temperature range ? 55 + 125 c t r ,t f input rise and fall time v cc = 3.3 0.3 v 0 100 ns/v v cc = 5.0 0.5 v 0 20 device junction temperature versus time to 0.1% bond failures junction t ime, time, temperature c hours y ears 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 normalized failure rate figure 3. failure rate vs. time junction temperature 1 1 10 100 1000 maximum ratings symbol parameter value unit v cc dc supply voltage ? 0.5 to + 7.0 v v in dc input voltage ? 0.5 to 7.0 v v out dc output voltage v cc =0 ? 0.5 to 7.0 v high or low state ?0.5 to v cc + 0.5 i ik input diode current ?20 ma i ok output diode current v out < gnd; v out > v cc +20 ma i out dc output current, per pin + 25 ma i cc dc supply current, v cc and gnd +50 ma p d power dissipation in still air sc?88a, tsop?5 200 mw ja thermal resistance sc?88a, tsop?5 333 c/w t l lead temperature, 1 mm from case for 10 s 260 c t j junction temperature under bias + 150 c t stg storage temperature ?65 to +150 c v esd esd withstand voltage human body model (note 2) >2000 v machine model (note 3) > 200 charged device model (note 4) n/a i latch?up latch?up performance above v cc and below gnd at 125c (note 5) 500 ma 1. maximum ratings are those values beyond which damage to the device may occur. exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. functional operation under absolute?maximum?rated conditions is not implied. functional operation should be restricted to the recommended operating conditions. 2. tested to eia/jesd22?a114?a 3. tested to eia/jesd22?a115?a 4. tested to jesd22?c101?a 5. tested to eia/jesd78 time, years 2/6
leshan radio company, ltd. dc electrical characteristics v cc t a = 25 c t a < 85 c ?55c < t a < 125c symbol parameter test conditions (v) min typ max min max min max unit v ih minimum high?level 2.0 1.5 1.5 1.5 v input voltage 3.0 2.1 2.1 2.1 4.5 3.15 3.15 3.15 5.5 3.85 3.85 3.85 v il maximum low?level 2.0 0.5 0.5 0.5 v input voltage 3.0 0.9 0.9 0.9 4.5 1.35 1.35 1.35 5.5 1.65 1.65 1.65 v oh minimum high?level v in = v ih or v il 2.0 1.9 2.0 1.9 1.9 v output voltage i oh = ? 50 a 3.0 2.9 3.0 2.9 2.9 v in = v ih or v il 4.5 4.4 4.0 4.4 4.4 v in = v ih or v il i oh = ?4 ma 3.0 2.58 2.48 2.34 i oh = ?8 ma 4.5 3.94 3.80 3.66 v ol maximum low?level v in = v ih or v il 2.0 0.0 0.1 0.1 0.1 v output voltage i ol = 50 a 3.0 0.0 0.1 0.1 0.1 v in = v ih or v il 4.5 0.0 0.1 0.1 0.1 v in = v ih or v il i ol = 4 ma 3.0 0.36 0.44 0.52 i ol = 8 ma 4.5 0.36 0.44 0.52 i in maximum input v in = 5.5 v or gnd 0 to5.5 0.1 1.0 1.0 a leakage current i cc maximum quiescent v in = v cc or gnd 5.5 2.0 20 40 a supply current l 74vhc1g08 6. c pd is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption witho ut load. average operating current can be obtained by the equation: i cc(opr) = c pd v cc f in + i cc . c pd is used to determine the no? load dynamic power consumption; p d = c pd v cc 2 f in + i cc v cc . ac electrical characteristics c load = 50 pf, input t r = t f = 3.0 ns t a = 25 c t a < 85 c ?55 c to 125 c symbol parameter test conditions min typ max min max min max unit t plh , maximum v cc = 3.3 0.3 v c l = 15 pf 4.1 8.8 10.5 12.5 ns t phl propogation delay, c l = 50 pf 5.9 12.3 14.0 16.5 input a or b to y v cc = 5.0 0.5 v c l = 15 pf 3.5 5.9 7.0 9.0 c l = 50 pf 4.2 7.9 9.0 11.0 c in maximum input 5.5 10 10 10 pf capacitance typical @ 2 5 c, v cc = 5.0 v c pd power dissipation capacitance (note 6) 11 pf 3/6
leshan radio company, ltd. l 74vhc1g08 device ordering information device nomenclature device order number logic circuit indicator temp range identifier technology device function package suffix tape and reel suffix package type (name/sot#/ common name) tape and reel size l 74vhc1g08dft1 l 74 vhc1g 08 df t1 sc?70/sc?88a/ 178 mm (7 in) sot?353 3000 unit l 74vhc1g08dft2 l 74 vhc1g 08 df t2 sc?70/sc?88a/ 178 mm (7 in) sot?353 3000 unit l 74vhc1g08dft4 l 74 vhc1g 08 df t4 sc?70/sc?88a/ 330 mm (13 in) sot?353 10,000 unit l 74vhc1g08dtt1 l 74 vhc1g 08 dt t1 sot?23/tsops/ 178 mm (7 in) sc?59 3000 unit l 74vhc1g08dtt3 l 74 vhc1g 08 dt t3 sot?23/tsops/ 330 mm (13 in) sc?59 10,000 unit figure 4. switching waveforms *includes all probe and jig capacitance figure 5. test circuit 4/6
leshan radio company, ltd. l 74 v hc1g0 8 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a?01 obsolete. new standard 419a?02. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k ?b? sc70?5/sc?88a/sot?353 df suffix soldering footprint* mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 5/6
leshan radio company, ltd. l 74 v hc1g0 8 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. a and b dimensions do not include mold flash, protrusions, or gate burrs. dim min max min max inches millimeters a 2.90 3.10 0.1142 0.1220 b 1.30 1.70 0.0512 0.0669 c 0.90 1.10 0.0354 0.0433 d 0.25 0.50 0.0098 0.0197 g 0.85 1.05 0.0335 0.0413 h 0.013 0.100 0.0005 0.0040 j 0.10 0.26 0.0040 0.0102 k 0.20 0.60 0.0079 0.0236 l 1.25 1.55 0.0493 0.0610 m 0 10 0 10 s 2.50 3.00 0.0985 0.1181 0.05 (0.002) 123 54 s a g l b d h c k m j __ _ _ sot23?5/tsop?5/sc59?5 dt suffix 0.7 0.028 1.0 0.039 mm inches scale 10:1 0.95 0.037 2.4 0.094 1.9 0.074 soldering footprint* 6/6
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